Zhijun Qu

Title: Zhijun Qu: Innovator in Power Semiconductor Technology

Introduction

Zhijun Qu is a prominent inventor based in Torrance, CA, known for his significant contributions to the field of power semiconductor technology. With a total of 5 patents to his name, Qu has made remarkable advancements that enhance the efficiency and performance of power devices.

Latest Patents

One of Qu's latest patents is titled "Dual epitaxial layer for high voltage vertical conduction power MOSFET devices." This innovation involves forming an epitaxial silicon junction receiving layer made of upper and lower layers. The lower layer has a higher resistivity and thickness compared to the upper layer. The combined thickness of these layers is less than that of a single epitaxial layer typically used for the same blocking voltage. P-N junctions are created in the upper layer to define a vertical conduction power MOSFET device, resulting in an on-resistance reduction of more than 10% without compromising blocking voltage. Another notable patent is the "Deep trench super switch device," which features multiple trenches, each containing a gate electrode polysilicon layer atop stacked conductive floating polysilicon layers, with the remaining trench space filled with a nonconductive material.

Career Highlights

Zhijun Qu is currently employed at International Rectifier Corporation, where he continues to innovate and develop cutting-edge technologies in the semiconductor industry. His work has significantly impacted the efficiency and reliability of power devices used in various applications.

Collaborations

Qu has collaborated with notable colleagues, including Kenneth Wagers and Daniel Marvin Kinzer, contributing to a dynamic and innovative work environment.

Conclusion

Zhijun Qu's contributions to power semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovations continue to shape the future of power devices, making them more efficient and effective.