ZhiFeng Gan

Title: ZhiFeng Gan: Innovator in Microelectronic Technology

Introduction

ZhiFeng Gan is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of microelectronic technology. His innovative approach has led to advancements in the methods used for forming gates in microelectronics.

Latest Patents

ZhiFeng Gan holds a patent for a method of forming the gate with the LELE double pattern. This invention relates specifically to microelectronic technology and introduces a method that utilizes an ONO structure (Oxide-SiN-Oxide). The method involves exposing the ONO structure twice and employing an advanced patterning film as a mask during the polysilicon etching process. By replacing the traditional hardmask of silicon oxide with the ONO structure, the method enhances the efficiency and cost-effectiveness of the process. It is particularly applicable to nodes in 22/20 nm and below, improving the maturity and stability of the poly gate process.

Career Highlights

ZhiFeng Gan is associated with Shanghai Huali Microelectronics Corporation, where he continues to push the boundaries of microelectronic technology. His work has been instrumental in developing advanced techniques that are crucial for the industry.

Collaborations

ZhiFeng Gan has collaborated with notable colleagues, including Jun Huang and ZhiBiao Mao. Their combined expertise has contributed to the success of various projects within the microelectronics field.

Conclusion

ZhiFeng Gan's innovative contributions to microelectronic technology, particularly through his patented methods, highlight his role as a key figure in advancing the industry. His work not only improves existing processes but also paves the way for future innovations.