Hefei, China

ZhiFan Liang

This inventor holds 1 USPTO granted patent. Top assignee: Raymx Microelectronics Corp.. Active years: 2025.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
1 patent (USPTO):Explore Patents

Title: ZhiFan Liang: Innovator in Embedded Storage Technology

Introduction

ZhiFan Liang is a prominent inventor based in Hefei, China. He has made significant contributions to the field of embedded storage technology. His innovative approach has led to the development of a unique patent that addresses the complexities of storage device configurations.

Latest Patents

ZhiFan Liang holds a patent titled "Determining a common transfer configuration for a plurality of storage devices in an embedded storage based on firmware version of each storage device." This invention focuses on an embedded storage device that utilizes multiple storage devices. It involves obtaining the firmware version of these devices and aligning their transmission configurations accordingly. This ensures that all devices can read and write using the same final transmission configuration, enhancing efficiency and compatibility.

Career Highlights

ZhiFan Liang is currently employed at Raymx Microelectronics Corp., where he continues to push the boundaries of technology. His work has been instrumental in advancing the capabilities of embedded storage solutions. With a focus on innovation, he has established himself as a key figure in his field.

Collaborations

ZhiFan Liang collaborates with Peng Gao, a fellow innovator in the industry. Together, they work on projects that aim to improve storage technology and its applications.

Conclusion

ZhiFan Liang's contributions to embedded storage technology exemplify the spirit of innovation. His patent and ongoing work at Raymx Microelectronics Corp. highlight his commitment to advancing the field. Through his efforts, he continues to shape the future of storage solutions.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…