Zhi Wan

Title: Zhi Wan - Innovator in Semiconductor Technology

Introduction

Zhi Wan is a prominent inventor based in Xiamen, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting diodes (LEDs). His innovative work has led to advancements that enhance the efficiency and performance of semiconductor chips.

Latest Patents

Zhi Wan holds a patent for a semiconductor chip of a light-emitting diode that features a quantum well layer stacked on an N-type gallium nitride layer. This invention includes a substrate, an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer arranged successively. The design incorporates an N-type electrode connected to the N-type gallium nitride layer and a P-type electrode connected to the P-type gallium nitride layer. The quantum well layer consists of at least one quantum barrier and at least one quantum well, with differing growth pressures to improve the interface crystal quality. This innovation significantly enhances the luminous efficiency of the semiconductor chip.

Career Highlights

Zhi Wan is associated with Xiamen Changelight Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced LED solutions that are crucial for various applications in modern electronics.

Collaborations

Zhi Wan collaborates with talented individuals such as Gang Yao and Xiangjing Zhuo. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in their field.

Conclusion

Zhi Wan's contributions to semiconductor technology exemplify the spirit of innovation. His patent for a semiconductor chip with enhanced luminous efficiency showcases his commitment to advancing the industry. Through his work at Xiamen Changelight Co., Ltd., he continues to inspire future developments in the field.