Zhenya Zhan

Title: Innovations of Zhenya Zhan in High-Voltage Device Technology.

Introduction

Zhenya Zhan is a notable inventor based in Chengdu, China. He has made significant contributions to the field of electrical engineering, particularly in the development of high-voltage devices. His innovative approach has led to the creation of a unique patent that addresses critical challenges in device performance.

Latest Patents

Zhan holds a patent for a lateral high-voltage device. This invention relates to a lateral high-voltage device that includes a dielectric trench region. The device features a doping-overlapping structure with different doping types in an alternating mode, strategically placed below, on the left side of, or on the right side of the dielectric trench region. Additionally, the device comprises a dielectric layer, a body field plate, a polysilicon gate, a gate oxide layer, and multiple doping regions. The invention effectively maintains the breakdown voltage while reducing the surface area and specific On-Resistance of the device.

Career Highlights

Zhenya Zhan is affiliated with the University of Electronic Science and Technology of China. His work in this academic institution has allowed him to engage in cutting-edge research and development in high-voltage technology. His contributions have been recognized within the academic community, showcasing his expertise and innovative spirit.

Collaborations

Zhan has collaborated with notable colleagues, including Ming Qiao and Yang Yu. These partnerships have fostered a collaborative environment that enhances the research and development of innovative technologies.

Conclusion

Zhenya Zhan's work in high-voltage device technology exemplifies the impact of innovation in electrical engineering. His patent reflects a significant advancement in the field, demonstrating his commitment to improving device performance and efficiency.