Zhenni Wan

Title: Zhenni Wan: Innovator in Resistive Memory Technology

Introduction

Zhenni Wan is a prominent inventor based in Beijing, China. He has made significant contributions to the field of memory technology, particularly through his innovative work on resistive memory cells. His research and inventions have the potential to advance the capabilities of memory storage solutions.

Latest Patents

Zhenni Wan holds a patent for a resistive memory cell. This invention includes a unipolar type RRAM and a MOS transistor as a selection transistor, which are serially connected. The MOS transistor is fabricated over a partial depletion SOI substrate, allowing it to provide a large current for programming and erasing the RRAM. The invention utilizes the intrinsic floating effect of the SOI substrate, enabling a MOS transistor over a SOI substrate to deliver larger source/drain current compared to one over bulk silicon. This design reduces the area occupied by the selection transistor, which is advantageous for the integration of the RRAM array. He has 1 patent to his name.

Career Highlights

Zhenni Wan is affiliated with Peking University, where he continues to engage in cutting-edge research. His work has garnered attention in the academic community, contributing to advancements in memory technology.

Collaborations

Zhenni Wan collaborates with notable colleagues, including Yimao Cai and Ru Huang. Their combined expertise fosters an environment of innovation and discovery in their research endeavors.

Conclusion

Zhenni Wan's contributions to resistive memory technology exemplify the impact of innovative thinking in the field of electronics. His work not only enhances memory storage solutions but also paves the way for future advancements in technology.