Company Filing History:
Years Active: 2022-2023
Title: Zhenlin Ding: Innovator in Flash Memory Technology
Introduction
Zhenlin Ding is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of flash memory technology, particularly in the area of EEPROM emulation. With a total of 2 patents, his work has advanced the efficiency and reliability of memory devices.
Latest Patents
Zhenlin Ding's latest patents focus on implementing wear leveling in EEPROM emulators formed of flash memory cells. The first patent describes systems and methods for wear leveling in a flash memory device that emulates an EEPROM. This invention utilizes an index array to store an index word for each logical address in the emulated EEPROM. The method involves receiving an erase command and a logical address, which corresponds to a sector of physical words in non-volatile memory cells. The process includes erasing the sector when the current word is the last physical word and changing the next index bit when it is not.
The second patent also addresses wear leveling in EEPROM emulators. It details a system where each bit in the index word is associated with a physical address for a physical word in the emulated EEPROM. This allows for a wear leveling algorithm that can skip programming operations, reprogram bits in certain situations, or shift to and program the next physical word as needed.
Career Highlights
Zhenlin Ding is currently employed at Silicon Storage Technology, Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in enhancing the performance and longevity of flash memory devices.
Collaborations
Zhenlin has collaborated with notable colleagues, including Guangming Lin and Xiaozhou Qian, contributing to various projects that push the boundaries of memory technology.
Conclusion
Zhenlin Ding's contributions to flash memory technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of more efficient memory solutions.