Zhengling Chen

Title: Innovations of Zhengling Chen in Fin Field-Effect Transistors

Introduction

Zhengling Chen is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of fin field-effect transistors. With a total of 2 patents, his work has garnered attention in the industry.

Latest Patents

Zhengling Chen's latest patents focus on innovative methods for fabricating fin field-effect transistors. One of his patents describes a method that includes providing a substrate and forming a plurality of fins on its surface. The process also involves creating a transitional layer with atoms identical to those of the fins on their side and top surfaces through a deposition process. Additionally, an oxidation process is performed to convert the transitional layer and a surface portion of the fins into a dielectric material, ultimately forming a gate dielectric layer on the fins. This method enhances the performance and efficiency of fin field-effect transistors.

Career Highlights

Zhengling Chen is currently employed at Semiconductor Manufacturing International Corporation, a leading company in the semiconductor industry. His expertise in the fabrication of advanced semiconductor devices has positioned him as a key player in his field.

Collaborations

Zhengling has collaborated with notable colleagues, including Xiaopeng Yu and Youfeng He. Their combined efforts contribute to the advancement of semiconductor technologies and innovations.

Conclusion

Zhengling Chen's work in fin field-effect transistors showcases his innovative spirit and dedication to advancing semiconductor technology. His patents reflect a commitment to improving device performance and efficiency in the industry.