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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10431671 B1

PDFFull Text
Date of Patent:
Oct. 01, 2019

Filed:

Dec. 07, 2017

Fin field-effect transistor

Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Xiaopeng Yu, Shanghai, CN;

Youfeng He, Shanghai, CN;

Zhengling Chen, Shanghai, CN;

Assignee:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Attorney:

Anova Law Group, PLLC

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02326 (2013.01); H01L 21/02337 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/31122 (2013.01); H01L 29/785 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 29/7854 (2013.01);
Abstract

A method is provided for fabricating fin field-effect transistors. The method includes providing a substrate. The method also includes forming a plurality of fins on a surface of the substrate. Further the method includes forming a transitional layer having atoms identical to atoms of the fins on side and top surfaces of the plurality of fins by a deposition process. Further, the method also includes performing an oxidation process to convert the transitional layer and a surface portion of the fins into a dielectric material to form a gate dielectric layer on the plurality of fins.

Find Patent Forward Citations

Yu, Xiaopeng. (2019). Fin field-effect transistor (U.S. Patent No. 10431671). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10431671

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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