Zhaohong Han

Title: Zhaohong Han: Innovator in Semiconductor Technology

Introduction

Zhaohong Han is a prominent inventor based in Union City, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced manufacturing processes for FinFET devices.

Latest Patents

Zhaohong Han holds a patent for "Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formation." This patent describes methods and apparatuses for passivating a FinFET semiconductor device and performing a gate etch using integrated atomic layer deposition (ALD) and etch processes. The methods include performing a partial gate etch, depositing a passivation layer on exposed surfaces of semiconductor fins and a gate layer by ALD, and performing a final gate etch to form one or more gate structures of the FinFET semiconductor device. The etch, deposition, and etch processes are performed in the same plasma chamber. The passivation layer is deposited on the sidewalls of the gate layer to maintain a gate profile of the one or more gate structures during etching.

Career Highlights

Zhaohong Han is currently employed at Lam Research Corporation, where he continues to innovate in the semiconductor manufacturing sector. His work focuses on enhancing the efficiency and effectiveness of FinFET device fabrication.

Collaborations

Zhaohong has collaborated with notable colleagues, including Xiang Zhou and Ganesh Upadhyaya, contributing to advancements in semiconductor technologies.

Conclusion

Zhaohong Han's innovative work in atomic layer deposition and etch processes has positioned him as a key figure in the semiconductor industry. His contributions are vital for the ongoing development of advanced electronic devices.