Zhao Wang

Title: Innovations of Zhao Wang in Power Semiconductor Devices

Introduction

Zhao Wang is a prominent inventor based in Chengdu, China. He has made significant contributions to the field of power semiconductor devices. His innovative work has led to the development of a unique patent that enhances the performance and robustness of these devices.

Latest Patents

Zhao Wang holds a patent for a power semiconductor device. This device includes a P-type substrate, an N-type well region, a P-type body region, a gate oxide layer, a polysilicon gate, a first oxide layer, a first N+ contact region, a first P+ contact region, drain metal, a first-type doped region, and a gate oxide layer. The design ensures that one end of the P-type body region is flush with or exceeds the end of the polysilicon gate. This configuration reduces the capacitance of the power semiconductor device and increases its switching frequency. Additionally, a polysilicon field plate connected with a source is introduced over a drift region, which shields the influence of the polysilicon gate on the drift region. This innovation eliminates capacitance caused by the overlapping of traditional polysilicon gates and drift regions, providing strong robustness against hot carrier effects.

Career Highlights

Zhao Wang is affiliated with the University of Electronic Science and Technology of China. His work at the university has allowed him to focus on advancing semiconductor technology. His research has garnered attention for its practical applications in improving electronic devices.

Collaborations

Zhao Wang collaborates with notable colleagues, including Ming Qiao and Liu Yuan. Their combined expertise contributes to the innovative research and development in the field of power semiconductor devices.

Conclusion

Zhao Wang's contributions to power semiconductor technology demonstrate his commitment to innovation and excellence. His patent reflects a significant advancement in the field, enhancing device performance and reliability.