The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jul. 05, 2021
University of Electronic Science and Technology of China, Chengdu, CN;
Ming Qiao, Chengdu, CN;
Liu Yuan, Chengdu, CN;
Zhao Wang, Chengdu, CN;
Wenliang Liu, Chengdu, CN;
Bo Zhang, Chengdu, CN;
University of Electronic Science and Technology of China, Chengdu, CN;
Abstract
A power semiconductor device includes a P-type substrate, an N-type well region, a P-type body region, a gate oxide layer, a polysilicon gate, a first oxide layer, a first N+ contact region, a first P+ contact region, drain metal, a first-type doped region, and a gate oxide layer. An end of the P-type body region is flush with or exceeds an end of the polysilicon gate, wherein Cof the power semiconductor device is reduced and a switching frequency of the power semiconductor device is increased. A polysilicon field plate connected with a source is introduced over a drift region that is not only shield an influence of the polysilicon gate on the drift region, thereby eliminating Ccaused by overlapping of traditional polysilicon gate and drift region, but also enable the power semiconductor device to have strong robustness against an hot carrier effect.