Liu Yuan

Title: Innovations of Liu Yuan in Power Semiconductor Devices

Introduction

Liu Yuan is a notable inventor based in Chengdu, China, recognized for his contributions to the field of power semiconductor devices. His innovative work has led to the development of a unique power semiconductor device that enhances performance and efficiency.

Latest Patents

Liu Yuan holds a patent for a power semiconductor device that includes a P-type substrate, an N-type well region, a P-type body region, a gate oxide layer, a polysilicon gate, a first oxide layer, a first N+ contact region, a first P+ contact region, drain metal, a first-type doped region, and a gate oxide layer. This invention reduces the capacitance of the power semiconductor device and increases its switching frequency. Additionally, it introduces a polysilicon field plate connected with a source over a drift region, which shields the influence of the polysilicon gate on the drift region. This innovation eliminates capacitance caused by the overlapping of traditional polysilicon gates and drift regions, providing strong robustness against hot carrier effects.

Career Highlights

Liu Yuan is affiliated with the University of Electronic Science and Technology of China, where he continues to advance research in semiconductor technology. His work has significantly impacted the efficiency and reliability of power semiconductor devices.

Collaborations

Liu Yuan collaborates with esteemed colleagues, including Ming Qiao and Zhao Wang, who contribute to his research endeavors and innovations in the field.

Conclusion

Liu Yuan's innovative contributions to power semiconductor devices exemplify the importance of research and development in advancing technology. His patent reflects a significant step forward in enhancing device performance and reliability.