Shanghai, China

Zhanyong Wang

This inventor holds 1 USPTO granted patent. Top assignee: Shanghai Institute of Technology. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhanyong Wang. Retrieved from https://idiyas.com/inventor/zhanyong-wang-pyfxdf8q

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Zhanyong Wang: Innovator in High-Entropy Alloys

Introduction

Zhanyong Wang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of materials science, particularly in the development of high-entropy alloys (HEAs). His innovative work focuses on creating materials with exceptional mechanical properties suitable for various industrial applications.

Latest Patents

Zhanyong Wang holds a patent for a "High-strength and high-plasticity casting high-entropy alloy (HEA) and preparation method thereof." This patent describes a high-strength and high-plasticity casting HEA with a general formula of AlCoCrTiFeNiCu. The specific composition parameters include 6.0

Career Highlights

Zhanyong Wang is affiliated with the Shanghai Institute of Technology, where he continues to advance research in high-entropy alloys. His work has garnered attention for its potential applications in various industries, including aerospace and automotive sectors.

Collaborations

Zhanyong Wang collaborates with notable colleagues such as Zemin Wang and Jiajun Li, contributing to a dynamic research environment focused on innovative materials.

Conclusion

Zhanyong Wang's contributions to the field of high-entropy alloys exemplify the importance of innovation in materials science. His patented work not only enhances mechanical properties but also promotes environmentally friendly practices in industrial production.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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