Hubei, China

Zhanggen Xia

This inventor holds 1 USPTO granted patent. Top assignee: Hubei San'an Optoelectronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhanggen Xia. Retrieved from https://idiyas.com/inventor/zhanggen-xia-2lxt2vb5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Zhanggen Xia in Light-Emitting Diodes

Introduction: Zhanggen Xia is a notable inventor based in Hubei, China. He has made significant contributions to the field of optoelectronics, particularly in the development of light-emitting diodes (LEDs). His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents: Zhanggen Xia holds a patent for a light-emitting diode and light-emitting device. The patent describes a light-emitting diode that includes a semiconductor light-emitting sequence layer and a distributed Bragg reflector (DBR) structure. The DBR structure is positioned on the first surface of the semiconductor light-emitting sequence layer. It consists of m first sublayers and n second sublayers arranged in an alternating manner, where both m and n are positive integers greater than 1. The materials used for the first and second sublayers differ, and each group of the stacked-layer structure is defined by one first sublayer and one second sublayer that are adjacent to each other. In at least 40% of these groups, the optical thickness of one sublayer exceeds ⅓ of the central wavelength of light emitted by the semiconductor light-emitting sequence layer, while the optical thickness of the other sublayer is less than ⅓ of the same wavelength. This innovative design enhances the efficiency and performance of light-emitting diodes.

Career Highlights: Zhanggen Xia is currently employed at Hubei San'an Optoelectronics Co., Ltd. His role at the company allows him to further explore and develop cutting-edge technologies in the field of optoelectronics. His work has not only contributed to the advancement of LED technology but has also positioned him as a key player in the industry.

Collaborations: Zhanggen Xia has collaborated with notable colleagues, including Minyou He and Peng Liu. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas, ultimately leading to advancements in their respective fields.

Conclusion: Zhanggen Xia's contributions to the field of light-emitting diodes exemplify the spirit of innovation and creativity in technology. His patent and work at Hubei San'an Optoelectronics Co., Ltd. highlight his commitment to advancing optoelectronic technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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