Shanghai, China

Zhang Cheng Long


Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Innovations by Zhang Cheng Long in Semiconductor Technology

Introduction

Zhang Cheng Long is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and method for forming it.

Latest Patents

Zhang Cheng Long holds a patent for a semiconductor structure and a method for forming the same. The patent describes a process that includes providing a base with multiple adjacent device unit regions. An initial device gate structure is formed on the base, which spans these regions. The method involves etching a portion of the initial device gate structure to create a top opening, forming a spacer layer on the side wall of this opening, and etching the remainder of the initial device gate structure to create a bottom opening. This innovative approach allows for better isolation between adjacent device unit regions and enhances the integrity of the device gate structure, ultimately improving transistor performance. He has 1 patent to his name.

Career Highlights

Zhang Cheng Long has worked with notable companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in Shanghai and Semiconductor Manufacturing International Corporation in Beijing. His experience in these organizations has contributed to his expertise in semiconductor technologies.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Zhang Cheng Long's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of more efficient semiconductor structures.

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