Zeyong Chen

Title: Zeyong Chen: Innovator in Electrical Leakage Testing

Introduction

Zeyong Chen is a notable inventor based in Guangdong, China. He has made significant contributions to the field of electrical engineering, particularly in the area of leakage testing structures and methods. His innovative approach has led to the development of a patented technology that addresses critical issues in semiconductor device design.

Latest Patents

Zeyong Chen holds a patent for a "Leakage testing structure and leakage testing method." This invention includes an electrical leakage test structure that comprises a substrate, a first well region, and a second well region, both formed in the substrate. It features a first shallow trench isolation structure between the two well regions, a first source/drain region in the first well region, multiple second source/drain regions in the second well region, and a test gate on the substrate. The associated testing method evaluates leakage current across various electrical leakage test structures with different designed dimensions, establishing a relationship between designed dimensions and leakage current. This relationship helps identify potential issues such as parasitic leakage in semiconductor devices.

Career Highlights

Zeyong Chen is currently employed at Cansemi Technology Inc., where he continues to innovate and develop new technologies. His work focuses on enhancing the reliability and performance of semiconductor devices through advanced testing methods.

Collaborations

Zeyong collaborates with Zhengliang Zhou, a fellow innovator in the field. Their combined expertise contributes to the advancement of technologies in electrical engineering.

Conclusion

Zeyong Chen's contributions to electrical leakage testing represent a significant advancement in semiconductor technology. His innovative patent and ongoing work at Cansemi Technology Inc. highlight his commitment to improving device reliability and performance.