Leakage testing structure and leakage testing method

Abstract

An electrical leakage test structure and an electrical leakage testing method are disclosed. The electrical leakage test structure comprises: a substrate; a first well region and a second well region, which are both formed in the substrate; a first shallow trench isolation structure formed between the second and first well regions; a first source/drain region formed in the first well region; a plurality of second source/drain regions formed in the second well region; and a test gate formed on the substrate. In the electrical leakage testing method, a plurality of electrical leakage test structures with different designed dimensions are tested to perform leakage current evaluation on each electrical leakage test structure, and a designed dimension vs. leakage current relationship is developed based on the leakage current evaluation on each electrical leakage test structure, which reflects whether the internal design of a corresponding semiconductor device is associated with any problem such as parasitic leakage.