Brookline, MA, United States of America

Zeev Feit

This inventor holds 2 USPTO granted patents. Top assignee: Laser Photonics, Inc.. Active years: 1991-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zeev Feit. Retrieved from https://idiyas.com/inventor/zeev-feit

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 1991-1992

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Zeev Feit in Quantum Well Tunable Diode Lasers

Introduction

Zeev Feit, an accomplished inventor based in Brookline, MA, has made significant strides in the field of semiconductor technology. With two patents to his name, Feit's work primarily focuses on low tuning rate buried quantum well tunable diode lasers, a groundbreaking advancement in laser technology.

Latest Patents

Feit's latest patents include:

1. **Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers** - This patent describes a PbTe/PbEuSeTe buried quantum well diode laser and array, along with the method for making the same. The innovative design features a quantum well active region layer that is buried between electrical and optical confinement regions that have an energy band gap greater than the active buried layer. This buried structure significantly enhances both electrical and optical confinement, reduces threshold currents, and ensures a stable single mode laser. The production of the buried laser and array utilizes a two-step molecular beam epitaxy method.

2. **Method for making low tuning rate single mode PbTe/PbEuSeTe buried** - This invention covers a PbTe/PbEuSeTe buried heterostructure tunable diode laser and array, along with its manufacturing process. The active region layer is interred between two lead salt semiconductor layers enriched with europium and selenium, which possess opposite conductivity types and a matching lattice constant to the active layer. The energy band gap of these lead chalcogenide layers also exceeds that of the active buried layer, contributing to effective electrical and optical confinement, reduced threshold currents, and a stable single mode laser. Alternative materials such as strontium, calcium, or tin may be employed instead of europium. Similar to the first patent, the production leverages a two-step molecular beam epitaxy method.

Career Highlights

Zeev Feit has established himself within the innovative context of Laser Photonics, Inc., where his expertise in semiconductor technology has been invaluable. His patents illustrate his commitment to advancing laser technology and contribute to the broader field of photonics.

Collaborations

Feit has collaborated with notable colleagues, including Douglas Kostyk and Robert J. Woods, whose partnership has facilitated the pursuit of advanced technological innovations. This collaboration underscores the importance of teamwork in the continuous evolution of the field.

Conclusion

Zeev Feit's innovative patents signify a remarkable contribution to the field of diode lasers. His work not only enhances the functionality of laser systems but also paves the way for future research and advancements in photonics, demonstrating the importance of innovation in today's technological landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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