Marietta, GA, United States of America

Z L Wang

This inventor holds 1 USPTO granted patent. Top assignee: Georgia Tech Research Corporation. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Z L Wang. Retrieved from https://idiyas.com/inventor/z-l-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Z L Wang: Innovator in Tin Oxide Nanostructures

Introduction

Z L Wang is a prominent inventor based in Marietta, GA (US). He is known for his significant contributions to the field of nanotechnology, particularly in the development of tin oxide nanostructures. His innovative work has implications for various applications in electronics and materials science.

Latest Patents

Z L Wang holds a patent for tin oxide nanostructures. The patent details methods of fabricating these nanostructures, which include SnO nanowires, SnO nanoribbons, and SnO nanotubes. Additionally, the patent describes a nanostructure featuring a rutile crystal lattice and an orthorhombic crystal superlattice. This work represents a significant advancement in the understanding and application of tin oxide materials.

Career Highlights

Wang is affiliated with the Georgia Tech Research Corporation, where he continues to explore the potential of nanostructures in various technological fields. His research has garnered attention for its innovative approach and practical applications.

Collaborations

One of his notable collaborators is James L Gole, with whom he has worked on advancing the field of nanotechnology.

Conclusion

Z L Wang's contributions to the development of tin oxide nanostructures highlight his role as an influential inventor in the field of nanotechnology. His work continues to inspire advancements in materials science and engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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