Valbonne, France

Yvon Cordier

This inventor holds 1 USPTO granted patent. Top assignees: Centre National De La Recherche Scientifique, Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yvon Cordier. Retrieved from https://idiyas.com/inventor/yvon-cordier-bgh2cdpy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yvon Cordier: Innovator in III-V Material Growth

Introduction

Yvon Cordier is a notable inventor based in Valbonne, France. He has made significant contributions to the field of material science, particularly in the growth of III-V materials. His innovative methods have the potential to impact various technological applications.

Latest Patents

Yvon Cordier holds a patent for a method of vertical growth of a III-V material. This method involves several intricate steps, including the formation of layers on a stack that includes a crystalline layer made of III-V material. The process also includes the use of masking layers and selective removal of sacrificial layers to facilitate the epitaxial growth of materials. His patent represents a significant advancement in the field of semiconductor technology.

Career Highlights

Throughout his career, Yvon Cordier has worked with prestigious organizations such as the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and the Centre National de la Recherche Scientifique. His work in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.

Collaborations

Yvon Cordier has collaborated with Matthew Charles, further enhancing his research and development efforts in the field of III-V materials.

Conclusion

Yvon Cordier's innovative methods and contributions to the growth of III-V materials highlight his importance in the field of material science. His work continues to influence advancements in technology and research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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