This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignees: Ecole Polytechnique, Centre National De La Recherche Scientifique, Université D'orleans. Active years: 2025-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
2 out of 149 
1 out of 5,383 
1 out of 39 
Years Active: 2025-2026
Title: Yvan Bonnassieux: Innovator in Organ Electrochemical Transistors
Introduction
Yvan Bonnassieux is a notable inventor based in Paris, France. He has made significant contributions to the field of organo electrochemical transistors, particularly through his innovative patent.
Latest Patents
Yvan Bonnassieux holds a patent for a Multi-gate OECT based sensor. This invention includes at least one set of source and drain electrodes, a plurality of gate electrodes for this set, at least one channel connected to the source and drain electrodes, and at least two gate electrodes that are differently functionalized. This technology has the potential to advance sensor applications significantly.
Career Highlights
Throughout his career, Yvan has worked with prestigious institutions such as Ecole Polytechnique and the Centre National de la Recherche Scientifique. His work in these organizations has allowed him to develop and refine his innovative ideas in the field of electrochemical sensors.
Collaborations
Yvan Bonnassieux has collaborated with Anna Shirinskaya, contributing to the advancement of research in his area of expertise.
Conclusion
Yvan Bonnassieux is a prominent figure in the field of organo electrochemical transistors, with a patent that showcases his innovative spirit. His work continues to influence the development of advanced sensor technologies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile