Kanagawa, Japan

Yutaka Yonemitsu

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2014-2016

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2 patents (USPTO):Explore Patents

Title: Yutaka Yonemitsu: Innovator in Semiconductor Technology

Introduction

Yutaka Yonemitsu is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that focus on improving the electric characteristics of semiconductor devices.

Latest Patents

Yonemitsu's latest patents include a method for manufacturing semiconductor devices that incorporate oxide semiconductors. The objective of this method is to enhance the electric characteristics of the devices. The semiconductor device features an oxide semiconductor film, a gate electrode that overlaps the oxide semiconductor film, and source and drain electrodes that are electrically connected to the oxide semiconductor film. The manufacturing process involves several steps, including the formation of a first insulating film made of gallium oxide, a second insulating film, and the creation of a contact hole through dry etching. The process concludes with the formation of wiring that connects to the gate, source, and drain electrodes through the contact hole.

Career Highlights

Yutaka Yonemitsu is associated with Semiconductor Energy Laboratory Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His work has been pivotal in developing methods that enhance the performance and reliability of semiconductor devices.

Collaborations

Throughout his career, Yonemitsu has collaborated with notable colleagues, including Akihiro Ishizuka and Shinya Sasagawa. These collaborations have contributed to the innovative advancements in semiconductor technology.

Conclusion

Yutaka Yonemitsu's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.

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