Hino, Japan

Yuta Fukushima

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Yuta Fukushima – Innovator in Nitride Semiconductor Technology

In the bustling city of Hino, Japan, Yuta Fukushima has emerged as a notable inventor in the field of semiconductor technology. His work in the realm of nitride semiconductors represents a significant contribution to the advancement of electronic devices.

Latest Patents

Yuta Fukushima holds a patent for a nitride semiconductor device. This invention details a unique structure that includes an epitaxial layer and an ion implantation layer. The ion implantation layer displays a continuous depth range extending over 100 nm or longer, with a P type doping concentration equal to or higher than 1×10 cm. A key feature of this invention is the region with a crystal defect density equal to or lower than 1×10 cm, located on the upper-surface side of the interface between the epitaxial layer and the ion implantation layer, within 100 nm from the interface. This innovative design is poised to enhance the performance and efficiency of semiconductor devices.

Career Highlights

Yuta Fukushima works at Fuji Electric Co., Ltd., a leading company in the field of electrical and electronic equipment. Through his career, he has demonstrated a keen ability to innovate, focusing on technologies that push the boundaries of semiconductor performance. His dedication to research and development has established him as a distinguished figure within his organization.

Collaborations

Yuta has collaborated with notable coworkers, including Shinya Takashima and Ryo Tanaka. These partnerships have facilitated the fusion of ideas and expertise, further driving advancement in semiconductor technology. Their collective efforts have contributed to critical developments that aim to enhance the efficiency and application of nitride semiconductors.

Conclusion

Yuta Fukushima stands out as an innovative inventor in Hino, Japan, making significant strides in the field of nitride semiconductors. His patents and collaborations exemplify a strong commitment to enhancing technology within the semiconductor industry. With his continued efforts, the future looks promising for advancements in this critical area of electronics.

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