The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Mar. 12, 2019
Fuji Electric Co., Ltd., Kanagawa, JP;
Shinya Takashima, Hachioji, JP;
Ryo Tanaka, Hino, JP;
Yuta Fukushima, Hino, JP;
Hideaki Teranishi, Hachioji, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A nitride semiconductor device is provide, the nitride semiconductor device including: an epitaxial layer; and an ion implantation layer that is provided on the epitaxial layer over a continuous depth range that extends over 100 nm or longer, and has a P type doping concentration equal to or higher than 1×10cm, wherein the ion implantation layer has a region with a crystal defect density equal to or lower than 1×10cm, the region being located in a range which is on an upper-surface-side of an interface between the epitaxial layer and the ion implantation layer, and is within 100 nm from the interface.