Limassol, Cyprus

Yury V Lahutski

This inventor holds 1 USPTO granted patent. Top assignee: Clevetura LLC. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yury V Lahutski. Retrieved from https://idiyas.com/inventor/yury-v-lahutski

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Yury V Lahutski: Innovator in Keyboard Technology

Introduction

Yury V Lahutski is a notable inventor based in Limassol, Cyprus. He has made significant contributions to the field of keyboard technology, particularly with his innovative designs that enhance user interaction.

Latest Patents

Lahutski holds 1 patent for a combined touch sensor and keypress sensor. This invention features a first layer that includes a portion of multiple touch sensor electrodes and exposed portions of keypress sensor electrodes. Additionally, it incorporates a second connecting layer with lines that connect the exposed portions of the keypress sensor electrodes. This design aims to improve the functionality and responsiveness of keyboards.

Career Highlights

Yury V Lahutski is currently associated with Clevetura LLC, where he continues to develop and refine his innovative ideas. His work focuses on creating advanced input devices that cater to the evolving needs of users in the digital age.

Collaborations

Lahutski has collaborated with talented individuals such as Vasily Borysyonok and Mikhail Yu Krupiankou. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Yury V Lahutski is a prominent figure in the realm of keyboard innovation, with a patent that showcases his expertise and vision. His contributions are paving the way for future advancements in user interface technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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