Moscow, Russia

Yury B Egorov

This inventor holds 1 USPTO granted patent. Top assignee: Freescale Semiconductor,inc.. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yury B Egorov. Retrieved from https://idiyas.com/inventor/yury-b-egorov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Yury B. Egorov: Innovator in Fast Circuit Simulation

Introduction

Yury B. Egorov is a prominent inventor based in Moscow, Russia. He is known for his significant contributions to the field of circuit simulation, particularly in the development of fast transient simulators for SOI (Silicon-On-Insulator) MOS circuits. His innovative approach has led to advancements in the accuracy and speed of circuit simulations.

Latest Patents

Yury B. Egorov holds a patent for a "Fast simulation of circuitry having SOI transistors." This patent describes a fast transient simulator that utilizes accurate SOI transistor table models. The simulator represents a circuit with partitions, simulating each partition separately for short time steps by numerically solving differential equations that describe its transient behavior. The entire circuit's behavior is simulated in an event-driven manner, where each event corresponds to an integration time step for each partition. By implementing a transformation that uses body charge as an independent variable instead of body voltage, the simulator achieves high accuracy and speed. The construction of SOI transistor table models enhances both speed and accuracy, allowing for a reduction in the number of table dimensions due to the approximately constant backgate capacitance of SOI transistors.

Career Highlights

Yury B. Egorov is currently employed at Freescale Semiconductor, Inc., where he continues to innovate in the field of semiconductor technology. His work has had a significant impact on the efficiency of circuit simulations, making him a valuable asset to his company and the industry.

Collaborations

Throughout his career, Yury has collaborated with notable professionals in the field, including Vladimir P. Zolotov and Rajendran Panda. These collaborations have contributed to the advancement of technology in circuit simulation and semiconductor design.

Conclusion

Yury B. Egorov's contributions to the field of circuit simulation through his innovative patent demonstrate his expertise and commitment to advancing technology. His work continues to influence the industry, showcasing the importance of innovation in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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