Ikeda, Japan

Yuria Saito

This inventor holds 1 USPTO granted patent. Top assignee: Agency of Industrial Science and Technology. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuria Saito. Retrieved from https://idiyas.com/inventor/yuria-saito

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Yuria Saito: Innovator in Ionic Conductors

Introduction

Yuria Saito is a prominent inventor based in Ikeda, Japan. She has made significant contributions to the field of ionic conductors, showcasing her innovative spirit and dedication to advancing technology.

Latest Patents

Yuria holds a patent for an ionic conductor, which comprises an oxide Na⁺ ionic conductor represented by the formula Na₄Zr₂Si₃O₁₂. This invention also includes a solid superacid represented by the formula SO₄²⁻/ZrO₂ incorporated as a dispersoid. Her work in this area highlights her expertise and commitment to developing new materials for various applications.

Career Highlights

Yuria Saito is affiliated with the Agency of Industrial Science and Technology, where she continues to push the boundaries of research and innovation. Her career is marked by a focus on enhancing the performance and efficiency of ionic conductors, which are crucial for various technological advancements.

Collaborations

Yuria has collaborated with notable colleagues, including Isao Ogino and Osamu Nakamura. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and expertise, further enhancing her contributions to the field.

Conclusion

Yuria Saito is a trailblazer in the realm of ionic conductors, with her innovative patent and collaborative efforts paving the way for future advancements. Her work exemplifies the impact of dedicated inventors in shaping technology and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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