Larchmont, NY, United States of America

Yuri M Brovman

USPTO Granted Patents = 2 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2017

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2 patents (USPTO):Explore Patents

Title: Inventor Profile: Yuri M Brovman

Introduction

Yuri M Brovman, a notable inventor based in Larchmont, NY, has made significant contributions to the field of substrates and barrier layers through his innovative patents. With a total of two patents to his name, Brovman's work showcases the intersection of materials science and practical applications in technology.

Latest Patents

Yuri M Brovman's latest patents include methods for selectively forming barrier layers on substrates. One such patent describes a method that involves forming a barrier layer comprising both a metal element and a non-metal element on the surface of the substrate. This innovative approach further extends to the formation of an electrically conductive film layer atop the barrier layer, culminating in the creation of a metallic portion within the conductive film. An essential aspect of this process includes selectively ablating portions of the barrier layer, enabling precise placement on dielectric layers, thereby enhancing the efficacy of electronic components.

Career Highlights

Throughout his career, Yuri has had the opportunity to work with reputable companies such as International Business Machines Corporation (IBM) and Süss Microtec Photonic Systems Inc. His experience in these leading organizations has undoubtedly contributed to his development as a skilled inventor, allowing him to leverage advanced technologies in his work.

Collaborations

Yuri M Brovman has collaborated with knowledgeable professionals in his field, including colleagues like Brian Michael Erwin and Nicholas A Polomoff. These collaborations have likely played a pivotal role in refining his inventive processes and exploring new avenues for innovation.

Conclusion

In conclusion, Yuri M Brovman's inventive spirit and commitment to technological advancement underscore his contributions to the field of barrier layers in substrates. His patents not only showcase his expertise but also contribute to the ongoing evolution of technology in materials science. As he continues to innovate, his work will undoubtedly influence future developments in this area.

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