Tokyo, Japan

Yuri Kunishige

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Mitsubishi Electric Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuri Kunishige. Retrieved from https://idiyas.com/inventor/yuri-kunishige

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Yuri Kunishige in Semiconductor Technology

Introduction

Yuri Kunishige is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and reliability.

Latest Patents

Yuri Kunishige holds 1 patent for a semiconductor device. This device includes a semiconductor substrate, an electrode, and a wire disposed on the substrate, all covered by a protective film. The protective film consists of a main protective film that covers portions of both the electrode and wire, along with a dummy protective film located at the corners of the semiconductor substrate. The design features a chamfer at each corner of the substrate, ensuring that the dummy protective film is spaced from the main protective film.

Career Highlights

Yuri Kunishige is currently associated with Mitsubishi Electric Corporation, where he continues to work on advancing semiconductor technologies. His expertise and innovative mindset have positioned him as a valuable asset in the field.

Collaborations

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Conclusion

Yuri Kunishige's contributions to semiconductor technology exemplify the importance of innovation in enhancing device performance. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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