Shenzhen, China

Yunming Zhou

This inventor holds 5 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignee: Huawei Technologies Co., Limited. Active years: 2015-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yunming Zhou. Retrieved from https://idiyas.com/inventor/yunming-zhou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2015-2024

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5 patents (USPTO):Explore Patents

Title: Innovations of Yunming Zhou

Introduction

Yunming Zhou is a prominent inventor based in Shenzhen, China. He has made significant contributions to the field of memory technology, holding a total of 5 patents. His work focuses on enhancing the efficiency and reliability of memory systems.

Latest Patents

One of his latest patents is titled "Memory, chip, and method for storing repair information of memory." This application provides a memory, a chip, and a method for storing repair information of the memory. The memory includes a repair circuit that is configured to receive a first signal from a processor and determine to be powered by a first power supply or a second power supply based on the status of the first signal, to store repair information. The repair information is information of the failed bit cells in the memory. The first power supply is zero or in a high impedance state when a system is powered off, and the second power supply is not zero when the system is powered off. The memory further comprises a processing circuit configured to perform communication between the memory and the processor based on the repair information. Therefore, the repair information of the memory can be stored even during power loss.

Another notable patent is for a "Storage unit and static random access memory." This storage unit includes a latch, and the latch provides a first storage bit. The storage unit further includes a first MOS transistor. A gate of the first MOS transistor is connected to the first storage bit, a source of the first MOS transistor is connected to a first read line, and a drain of the first MOS transistor is connected to a second read line. In a first state, the first read line is a read word line, and the second read line is a read bit line; or in a second state, the second read line is a read word line, and the first read line is a read bit line.

Career Highlights

Yunming Zhou is currently employed at Huawei Technologies Co., Limited, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory systems, making them more efficient and reliable.

Collaborations

He has collaborated with notable coworkers such as Bingwu Ji and Tanfu Zhao, contributing to various projects that enhance memory technology.

Conclusion

Yunming Zhou's contributions to memory technology through his innovative patents and work at Huawei

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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