Gyeonggi, South Korea

Yung-Seob Yu

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yung-Seob Yu. Retrieved from https://idiyas.com/inventor/yung-seob-yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Yung-Seob Yu: Innovator in Semiconductor Technology

Introduction

Yung-Seob Yu is a prominent inventor based in Gyeonggi, South Korea. He is known for his contributions to semiconductor technology, particularly in the area of trench isolation regions. His innovative methods have significantly impacted the efficiency and performance of semiconductor devices.

Latest Patents

Yung-Seob Yu holds a patent for "Methods of forming trench isolation regions having stress-reducing nitride layers therein." This patent outlines a process that includes forming a trench masking layer on a semiconductor substrate, etching a trench, and creating a trench nitride layer. The method ensures that the trench insulating material is effectively filled while maintaining the integrity of the trench nitride layer.

Career Highlights

Yung-Seob Yu has made significant strides in his career at Samsung Electronics Co., Ltd. His work has led to advancements in semiconductor manufacturing processes, enhancing the reliability and performance of electronic devices. His innovative approach has earned him recognition in the field.

Collaborations

Yung-Seob Yu has collaborated with notable colleagues, including Seung-Mok Shin and Byung-Ki Kim. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Yung-Seob Yu's contributions to semiconductor technology exemplify the spirit of innovation. His patented methods continue to influence the industry, showcasing the importance of research and development in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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