Yung-Chung Lee

Title: Yung-Chung Lee: Innovator in Silicon Carbide Technology

Introduction

Yung-Chung Lee is a prominent inventor based in Panciao, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of trench power MOSFETs in silicon carbide.

Latest Patents

Yung-Chung Lee holds a patent for a trench power MOSFET in silicon carbide and the method of making the same. This patent describes a structure of an accumulated type trench MOSFET in silicon carbide (SiC) and its forming method. The MOSFET features a trench gate that includes a gate oxide layer, a polysilicon layer, a source region, and a drain region. The source region consists of a p+ heavily doped region, an n+ heavily doped region, and a p-base region, with a source contact metal layer. The p+ heavily doped region, the n+ heavily doped region, and the p-base region are in contact with each other. The former two extend to the front surface of the silicon carbide substrate, which has the source contact metal layer formed over it, while the p-base region is positioned beneath them. Additionally, the p-base region is separated from the trench by an accumulation channel. The drain contact metal layer is formed on the rear surface of the silicon carbide substrate, where the rear region is heavily doped compared to the front region.

Career Highlights

Yung-Chung Lee is affiliated with the Industrial Technology Research Institute, where he continues to advance research in semiconductor technologies. His work has been instrumental in enhancing the performance and efficiency of power devices.

Collaborations

He has collaborated with notable colleagues, including Chih-Wei Hsu and Tsung-Ming Pan, contributing to various projects and innovations in the field.

Conclusion

Yung-Chung Lee's contributions to silicon carbide technology and his innovative patent demonstrate his significant role in advancing semiconductor technology. His work continues to influence the industry and pave the way for future innovations.