Yung-Chun Yang

Title: Yung-Chun Yang: Innovator in Semiconductor Technology

Introduction

Yung-Chun Yang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the formation of source/drain regions in semiconductor devices. His innovative methods have the potential to enhance the performance and efficiency of electronic components.

Latest Patents

Yung-Chun Yang holds a patent for a method of forming source/drain regions with quadrilateral layers. This method involves creating a protruding semiconductor stack that includes multiple sacrificial layers and nanostructures arranged alternately. The process includes forming a dummy gate structure, etching the semiconductor stack to create a source/drain recess, and subsequently forming a source/drain region within that recess. The formation of the source/drain region is characterized by the growth of first epitaxial layers on the sidewalls of the nanostructures, which have a quadrilateral cross-section. This innovative approach allows for a controlled dopant concentration, enhancing the functionality of semiconductor devices.

Career Highlights

Yung-Chun Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on advancing semiconductor fabrication techniques, contributing to the development of cutting-edge technologies that drive the electronics market.

Collaborations

Yung-Chun Yang collaborates with notable colleagues, including Tsz-Mei Kwok and Cheng-Yen Wen. Their combined expertise fosters an environment of innovation and progress within their projects.

Conclusion

Yung-Chun Yang's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His patent for forming source/drain regions with quadrilateral layers showcases his commitment to advancing technology and improving device performance.