Yung-Chun Wu

Title: Yung-Chun Wu and Single-Electron Transistor Technology.

Introduction

Yung-Chun Wu is an inventor associated with Taipei, Taiwan. His patent work concerns nanoscale transistor fabrication and the control of electron behavior in semiconductor devices.

Latest Patents

The provided information lists one patent for Wu: Single-electron transistor and fabrication method thereof. The invention describes a method for fabricating a single-electron transistor on a silicon-on-insulator substrate. It forms a nanoscale, one-dimensional channel between the source and drain, then creates self-aligned polysilicon sidewall spacer gates using electron-beam lithography.

Applying an external bias to the spacer gates creates two potential barriers and a quantum dot that can store charge between them. A metal upper gate induces a two-dimensional electron gas and controls the energy level of the quantum well. The fabrication method combines electron-beam lithography with multilayer-aligned direct writing, oxidation, and wet etching.

Career Highlights

Wu’s listed patent focuses on a fabrication approach for nanoscale semiconductor devices. The described design brings together self-aligned gates, a charge-storing quantum dot, and an upper gate for controlling the device’s electronic properties. The supplied information does not identify an employer.

Collaborations

The provided information names Shiue-Shin Liu and Tiao-Yuan Huang as Wu’s coworkers. It does not specify their roles or the nature of their collaboration.

Conclusion

Yung-Chun Wu’s listed invention presents a method for fabricating and controlling a single-electron transistor, with potential relevance to nanoscale electronics. The supplied data attributes 1 patent to him.