Gyeonggi-do, South Korea

Yung Bog Yoon

This inventor holds 1 USPTO granted patent. Top assignee: Skhynix Inc.. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yung Bog Yoon. Retrieved from https://idiyas.com/inventor/yung-bog-yoon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Yung Bog Yoon: Innovator in Semiconductor Technology

Introduction

Yung Bog Yoon is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs that enhance device performance.

Latest Patents

Yoon holds a patent for a semiconductor device that features protective lines. This invention includes a signal transmission line extending in a first direction, an outer protective line that runs parallel to the signal transmission line, and an inner protective line positioned between the two. The design aims to improve the reliability and efficiency of semiconductor devices.

Career Highlights

Yung Bog Yoon is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work focuses on developing advanced technologies that push the boundaries of current semiconductor applications.

Collaborations

Yoon collaborates with talented colleagues, including Young Hee Yoon and Bum Su Kim, who contribute to the innovative projects at SK Hynix Inc. Their teamwork fosters a creative environment that leads to groundbreaking advancements in semiconductor technology.

Conclusion

Yung Bog Yoon's contributions to semiconductor technology exemplify the spirit of innovation in the industry. His patent for a semiconductor device with protective lines showcases his commitment to enhancing device performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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