This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Huawei Technologies Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yun Ding and His Avalanche Photodiode Innovation.
Introduction
Yun Ding is an inventor based in Wuhan, China, and is associated with Huawei Technologies Co., Ltd. His patent work includes an avalanche photodiode design intended for use in detectors and laser radar systems.
Latest Patents
Ding is credited with 1 patent: “APD, APD Fabrication Method, Detector, and Laser Radar System.” The patent describes an avalanche photodiode built from vertically arranged gain, gradient, and absorption layers, positioned between a buffer layer and a diffusion barrier layer. Its gain layer contains at least two stacked gain units, each comprising a multiplication layer and a charge layer. The specified spacing places the charge layer closer to the gradient layer than the multiplication layer.
Career Highlights
Ding’s listed patent reflects work on semiconductor photodetector architecture and fabrication. The disclosed device is designed for detector and laser radar applications.
Collaborations
Ding is associated with Huawei Technologies Co., Ltd. His listed coworkers include Hongming Shen and Yanli Zhao.
Conclusion
Yun Ding’s patent describes a layered avalanche photodiode architecture for detector and laser radar systems, highlighting his contribution to photodetection technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile