Yulin Zheng

Title: Yulin Zheng: Innovator in Two-Dimensional AlN Materials

Introduction

Yulin Zheng is a prominent inventor based in Guangzhou, China. He has made significant contributions to the field of materials science, particularly in the development of two-dimensional materials. His innovative work has led to advancements that have potential applications in various high-tech industries.

Latest Patents

Yulin Zheng holds a patent for a two-dimensional AlN material and its preparation method and application. The patent outlines a method that includes several steps: selecting a substrate and its crystal orientation, cleaning the surface of the substrate, transferring a graphene layer to the substrate, annealing the substrate, and using the MOCVD process to introduce hydrogen to open the graphene layer and passivate the surface of the substrate. Finally, the method involves growing a two-dimensional AlN layer using the MOCVD process. This preparation method is noted for its simplicity, time efficiency, and effectiveness. The two-dimensional AlN material produced can be utilized in HEMT devices, deep ultraviolet detectors, and deep ultraviolet LEDs, among other applications.

Career Highlights

Yulin Zheng is affiliated with the South China University of Technology, where he continues to engage in research and development. His work has garnered attention for its practical implications in the field of electronics and photonics.

Collaborations

Yulin Zheng has collaborated with notable colleagues, including Wenliang Wang and Guoqiang Li. Their combined expertise has contributed to the advancement of research in two-dimensional materials.

Conclusion

Yulin Zheng's innovative work in the field of two-dimensional AlN materials showcases his commitment to advancing technology. His contributions have the potential to impact various industries significantly.