Tokyo, Japan

Yukinori Kurogi

This inventor holds 2 USPTO granted patents. Top assignee: Nippon Electric Co., Ltd.. Active years: 1980-1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yukinori Kurogi. Retrieved from https://idiyas.com/inventor/yukinori-kurogi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 93(Granted Patents)


Company Filing History:


Years Active: 1980-1987

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2 patents (USPTO):Explore Patents

Title: Innovations of Yukinori Kurogi

Introduction

Yukinori Kurogi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, Kurogi's work focuses on advancing semiconductor devices and memory technologies.

Latest Patents

Kurogi's latest patents include a method for manufacturing a semiconductor device and a semiconductor memory device having multi-gate transistors. The first patent describes a method of epitaxying layers on a semiconductor substrate through apertures in an insulating layer formed on a substrate. This innovative approach allows layers to be grown from the substrate and extend on the insulating layer by reacting dichlorosilane, hydrogen chloride, and a carrier gas flow in a chamber under reduced pressure. These layers are crucial for semiconductor device formation. The second patent discloses a semiconductor memory device that can be formed in a parallel array for high-density integration. This memory device features a multigate memory transistor formed in a first semiconductor region of one conductivity type within a substrate of the opposite conductivity type. The design includes source and drain regions of opposite conductivity type and a gate insulating layer situated between them. A plurality of gate electrodes are formed on the gate insulating layer, separated laterally from each other, with opposite conductivity type regions formed in the first semiconductor region under the intervals between adjacent gate electrodes.

Career Highlights

Kurogi is associated with Nippon Electric Co., Ltd., where he has been instrumental in developing cutting-edge semiconductor technologies. His work has significantly impacted the efficiency and performance of semiconductor devices.

Collaborations

Kurogi has collaborated with notable colleagues, including Nobuhiro Endo and Kiyoshi Sugibuchi. Their combined expertise has contributed to the advancement of semiconductor innovations.

Conclusion

Yukinori Kurogi's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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