Hamamatsu, Japan

Yukichi Ono


Average Co-Inventor Count = 1.1

ph-index = 3

Forward Citations = 275(Granted Patents)


Location History:

  • Hamamatsu-shi, JP (2007)
  • Hamamatsu, JP (1997 - 2009)

Company Filing History:


Years Active: 1997-2009

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5 patents (USPTO):Explore Patents

Title: Innovations of Yukichi Ono

Introduction

Yukichi Ono is a prominent inventor based in Hamamatsu, Japan. He has made significant contributions to the field of semiconductor technology, particularly in memory devices. With a total of 5 patents to his name, Ono's work has had a considerable impact on the industry.

Latest Patents

One of his latest patents is a semiconductor memory device and its test method. This invention involves a test circuit connected to a memory core integrated unit of SRAM. When the memory core integrated unit is to be tested, a test start signal is set to a high level. This allows one of a bit line and an inverted bit line to be used for data writing, while the test circuit sets data to the selected bit line. The other bit line is utilized for data reading, and the written data is set to this bit line during normal operation. The method determines whether each memory core is defective by confirming that the data set to the bit line and the data set to the inverted bit line are mutually inverted. This innovative test method enables the quick detection of defects in each memory core of semiconductor memory, such as SRAM.

Career Highlights

Yukichi Ono is currently employed at Yamaha Corporation, where he continues to develop cutting-edge technologies in semiconductor memory. His expertise and innovative approach have positioned him as a key figure in the advancement of memory device testing methods.

Collaborations

Ono has collaborated with fellow inventor Katsuhiko Ishida, contributing to the development of new technologies and enhancing the capabilities of semiconductor devices.

Conclusion

Yukichi Ono's contributions to semiconductor memory technology exemplify the spirit of innovation. His patents and collaborative efforts continue to shape the future of memory devices, making significant strides in the industry.

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