Kanagawa, Japan

Yuki Murakami

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuki Murakami. Retrieved from https://idiyas.com/inventor/yuki-murakami-vpg97n3p

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Yuki Murakami: Innovator in Semiconductor Technology

Introduction

Yuki Murakami is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to silicon whiskers. His work has implications for various applications, including solar cells and lithium-ion batteries.

Latest Patents

Yuki Murakami holds a patent for a manufacturing method of a group of whiskers. The process involves placing a seed substrate to face a formation substrate, followed by the introduction of a gas containing silicon for chemical vapor deposition. This method allows for the growth of silicon whiskers directly on the formation substrate, which can be utilized in advanced technologies.

Career Highlights

Murakami is associated with Semiconductor Energy Laboratory Co., Ltd., where he continues to push the boundaries of semiconductor research. His innovative approach has led to the development of materials that enhance the performance of electronic devices.

Collaborations

Some of his notable coworkers include Toshihiko Takeuchi and Makoto Ishikawa, who have also contributed to advancements in semiconductor technology.

Conclusion

Yuki Murakami's work exemplifies the spirit of innovation in the semiconductor industry. His contributions through patents and collaborations continue to influence the development of cutting-edge technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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