Hopewell Junction, NY, United States of America

Yuk L Tsang


Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 18(Granted Patents)


Location History:

  • Kingston, NY (US) (1989)
  • Hopewell Junction, NY (US) (1996)

Company Filing History:


Years Active: 1989-1996

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2 patents (USPTO):Explore Patents

Title: Innovations of Yuk L Tsang

Introduction

Yuk L Tsang is a notable inventor based in Hopewell Junction, NY (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

His latest patents include a "Method and apparatus for stressing, burning in and reducing leakage." This invention focuses on microwave methods for burning-in, electrical stressing, thermal stressing, and reducing rectifying junction leakage current in fully processed semiconductor chips. The described techniques allow for a substantially shorter burn-in period compared to conventional methods, eliminating the need for special workpiece holders. Additionally, he has developed a "Process for making a contact structure including polysilicon and metal." This multi-layer contact process provides an efficient way to create low resistance ohmic contacts to shallow semiconductor regions, enhancing electrical characteristics.

Career Highlights

Yuk L Tsang is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in semiconductor technologies. His work has had a lasting impact on the industry, particularly in improving the performance and reliability of semiconductor devices.

Collaborations

He has collaborated with notable coworkers such as Peter E Freiermuth and Kathleen S Ginn, contributing to various projects that advance semiconductor technology.

Conclusion

Yuk L Tsang's contributions to the field of semiconductor technology through his patents and work at IBM highlight his role as a significant innovator. His advancements continue to influence the industry and pave the way for future developments.

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