Yuji Murata

Title: Innovations of Yuji Murata in Thin Film Technology.

Introduction

Yuji Murata is a notable inventor based in Kawasaki, Japan. He has made significant contributions to the field of thin film technology, particularly in the development of methods for forming films that enhance the performance of thin film transistors.

Latest Patents

Murata holds a patent for a method for forming a film and a method for manufacturing a thin film. This patent describes a crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method. The resulting grain size is approximately 200 nm, which increases the mobility of carriers. The crystal silicon is grown within a temperature range of 250°C to 400°C. This innovation leads to improved transistor characteristics when forming various types of thin film transistors, including planar type, inverted stagger type, and stagger type. Additionally, the patent outlines a method for reducing leakage current in the OFF-state of a transistor by regulating the impurity density in a silicon film formed between the source and drain electrodes.

Career Highlights

Yuji Murata is currently employed at Fujitsu Corporation, where he continues to work on advancements in semiconductor technology. His expertise in thin film technology has positioned him as a key figure in the development of efficient and high-performance transistors.

Collaborations

Murata has collaborated with notable colleagues such as Tomotaka Matsumoto and Jun Inoue. Their combined efforts have contributed to the advancement of technology in their field.

Conclusion

Yuji Murata's innovations in thin film technology and his patent contributions have significantly impacted the performance of thin film transistors. His work continues to influence advancements in semiconductor technology, showcasing the importance of innovation in this field.