Hamilton, Canada

Yuhang Yang

This inventor holds 1 USPTO granted patent. Top assignee: Mcmaster University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuhang Yang. Retrieved from https://idiyas.com/inventor/yuhang-yang-gro0uwfd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yuhang Yang: Innovator in Power Semiconductor Packaging

Introduction

Yuhang Yang is a notable inventor based in Hamilton, Canada. He has made significant contributions to the field of power semiconductor devices, particularly through his innovative patent.

Latest Patents

Yuhang Yang holds a patent for a technology titled "Silver sintered molybdenum (SSM) packaging for power semiconductor devices." This patent describes a method of manufacturing SSM packaging that includes a substrate and a MOSFET die. The first side of the MOSFET die is bonded to the substrate using nano silver sintering. Additionally, at least two leads are connected to the substrate and the MOSFET die, utilizing nano silver sintering for bonding. Each component is formed of pure molybdenum, enhancing the efficiency and reliability of power semiconductor devices.

Career Highlights

Yuhang Yang is affiliated with McMaster University, where he continues to advance research in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Yuhang Yang collaborates with Ali Emadi, a fellow researcher, to further explore innovations in the field of power electronics.

Conclusion

Yuhang Yang's contributions to power semiconductor packaging demonstrate his commitment to advancing technology in this critical area. His innovative patent reflects the potential for improved efficiency in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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