Company Filing History:
Years Active: 2001
Title: Yuh-Sheng Chern: Innovator in Semiconductor Technology
Introduction
Yuh-Sheng Chern is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for enhancing the performance of MOS transistors. With a total of 2 patents to his name, Chern's work has had a considerable impact on the industry.
Latest Patents
Chern's latest patents include a "Method of performing threshold voltage adjustment for MOS transistors." This invention outlines a systematic approach to forming threshold voltage adjustments, which involves the sequential formation of a first oxide layer and a nitride layer on a silicon substrate. The process includes the creation of shallow trenches and active regions through photolithography and dry etching technology, followed by ion implantation steps for threshold voltage adjustment.
Another significant patent is the "Method of forming shallow trench isolation structure." This method details the manufacturing process of a shallow trench isolation structure, which includes forming a pad oxide layer and a mask layer over a substrate. The process involves creating a trench, oxidizing the substrate, and depositing a polysilicon layer to fill the trench, ultimately leading to the formation of a polysilicon plug.
Career Highlights
Yuh-Sheng Chern is currently employed at Vanguard International Semiconductor Corporation, where he continues to innovate in semiconductor technology. His expertise in the field has positioned him as a key player in advancing the capabilities of MOS transistors and isolation structures.
Collaborations
Chern has collaborated with several talented individuals in his field, including Yin-Pin Wang and Chung-Ju Lee. These collaborations have fostered a productive environment for innovation and development in semiconductor technologies.
Conclusion
Yuh-Sheng Chern's contributions to semiconductor technology through his patents and work at Vanguard International Semiconductor Corporation highlight his role as an influential inventor. His innovative methods for enhancing MOS transistors and isolation structures continue to shape the future of the industry.