Yuanyuan Wu

Title: Innovations by Yuanyuan Wu in NAND Memory Technology

Introduction

Yuanyuan Wu is an accomplished inventor based in Shanghai, China. She has made significant contributions to the field of NAND memory technology, particularly in the area of erase termination processes. Her innovative approach addresses critical challenges in memory cell operations, enhancing the reliability and efficiency of NAND devices.

Latest Patents

Yuanyuan Wu holds a patent for a technology titled "NAND early erase termination based on leakage current test." This invention provides a method for early erase termination as a counter-measure for erase disturb. The technology allows multiple erase blocks of NAND memory cells to be erased in parallel during an erase procedure. By testing for leakage current in each erase block sequentially, the system can identify and remove any blocks that fail the test, thereby preventing potential issues during the erase process.

Career Highlights

Yuanyuan Wu is currently employed at Sandisk Technologies Inc., where she continues to develop innovative solutions in NAND memory technology. Her work has been instrumental in advancing the capabilities of NAND devices, ensuring they operate efficiently under various conditions.

Collaborations

Yuanyuan collaborates with talented colleagues, including Xiaochen Zhu and Lito De La Rama. These partnerships foster a creative environment that encourages the development of groundbreaking technologies in the field of memory storage.

Conclusion

Yuanyuan Wu's contributions to NAND memory technology exemplify her dedication to innovation and excellence. Her patent on early erase termination showcases her ability to solve complex problems in the industry. Through her work at Sandisk Technologies Inc., she continues to push the boundaries of what is possible in memory technology.