Yuan-Huang Lee

Title: Innovations of Yuan-Huang Lee in Resistive Memory Technology

Introduction

Yuan-Huang Lee is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, particularly through his innovative patent related to resistive memory cells. His work is instrumental in advancing the capabilities of memory storage solutions.

Latest Patents

Yuan-Huang Lee holds a patent titled "Resistive memory cell using an interfacial transition metal compound layer and method of forming the same." This patent describes a resistive memory cell that includes a lower electrode, a resistive transition metal oxide layer, and an upper electrode. The lower electrode is designed with at least one lower metallic barrier layer and a lower metal layer that contains a first metal with a melting point exceeding 2,000 degrees Celsius. Additionally, it features a transition metal compound layer made from an oxide or nitride of a transition metal selected from titanium (Ti), tantalum (Ta), and tungsten (W). The resistive transition metal oxide layer is composed of a conductive-filament-forming dielectric oxide of at least one transition metal, situated on the transition metal compound layer. The upper electrode is constructed with an upper metal layer that includes a second metal also having a melting point higher than 2,000 degrees Celsius, along with at least one upper metallic barrier layer.

Career Highlights

Yuan-Huang Lee is currently associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to focus on cutting-edge technologies that enhance memory performance and efficiency.

Collaborations

Yuan-Huang Lee has collaborated with several talented individuals in his field, including Wen-Hao Cheng and Yu-Wen Liao. These collaborations have contributed to the development of innovative solutions in memory technology.

Conclusion

Yuan-Huang Lee's contributions to resistive memory technology exemplify the importance of innovation in the semiconductor industry. His patent reflects a significant advancement in memory cell design, showcasing his expertise and commitment to technological progress.