Yuan-Hsuan Lin

Title: Innovations of Yuan-Hsuan Lin in Non-Volatile Memory Devices

Introduction

Yuan-Hsuan Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique non-volatile memory device that enhances data storage capabilities.

Latest Patents

Yuan-Hsuan Lin holds a patent for a non-volatile memory device. This device includes a floating gate element, a control coupling element, an erase coupling element, and a select gate element. The floating gate element features a floating gate layer. The control coupling element receives a control voltage and couples it to the floating gate layer, enabling the floating gate element to perform read or write operations based on the control voltage, a word select voltage, and a bit select voltage. The erase coupling element receives an erase voltage and couples it to the floating gate layer, allowing the floating gate element to perform erase operations according to the erase voltage. The select gate element is electrically connected to the floating gate element and generates the word select voltage based on a word line driving voltage and a source line driving voltage. This innovative design improves the efficiency and reliability of memory devices.

Career Highlights

Yuan-Hsuan Lin is currently associated with Copee Technology Company, where he continues to work on advancements in memory technology. His expertise and innovative mindset have positioned him as a valuable asset in the field of electronics and memory devices.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Yuan-Hsuan Lin's contributions to non-volatile memory technology exemplify the impact of innovative thinking in the electronics industry. His patent reflects a significant advancement in memory device functionality, showcasing his role as a leading inventor in this field.