Riga, Latvia

Yu M Gelfgat


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: Yu M Gelfgat: Innovator in Semiconductor Crystal Growth

Introduction

Yu M Gelfgat is a notable inventor based in Riga, Latvia. He has made significant contributions to the field of semiconductor materials, particularly in the growth of single crystals. His innovative approach has led to advancements in the manufacturing processes of semiconductors.

Latest Patents

Yu M Gelfgat holds a patent for a process and apparatus for the growth of single crystals. This patent describes a method for growing a single crystal from semiconductor material using the Czochralski method. The process involves subjecting the melt to a magnetic field during crystal growth, which is generated by superposing a static magnetic field and an alternating magnetic field. This innovative approach enhances the quality of the crystals produced.

Career Highlights

Gelfgat is associated with Wacker Siltronik Gesellschaft für Halbleitermaterialien AG, a company known for its expertise in semiconductor materials. His work at this organization has allowed him to apply his innovative ideas in a practical setting, contributing to the advancement of semiconductor technology.

Collaborations

Throughout his career, Yu M Gelfgat has collaborated with esteemed colleagues such as Erich Tomzig and Werner Zulehner. These collaborations have fostered a productive environment for innovation and research in the field of semiconductor materials.

Conclusion

Yu M Gelfgat's contributions to the field of semiconductor crystal growth exemplify the impact of innovative thinking in technology. His patent and work at Wacker Siltronik highlight the importance of advancements in semiconductor manufacturing processes.

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