Company Filing History:
Years Active: 1995-2002
Title: Innovations of Yu-Lam Ho
Introduction
Yu-Lam Ho is a prominent inventor based in Cupertino, CA, known for his significant contributions to semiconductor technology. He holds a total of 5 patents, showcasing his expertise and innovative spirit in the field.
Latest Patents
Among his latest patents is a method of forming source and drain regions for CMOS devices. This invention focuses on producing NMOS, PMOS, or CMOS semiconductor devices with reduced substrate current and increased device lifetime. The design includes a source-gate-drain device with a moderately doped source region, a lightly doped source region, a gate or channel region, a lightly doped drain region, and a moderately doped drain region. The arrangement is crucial for enhancing the performance of the device. Another notable patent is for an integrated circuit with isolation of field oxidation by noble gas. This innovation involves a silicon semiconductor integrated circuit that features an insulative field oxidation layer, which does not encroach under active circuit elements. The use of noble gas ions during the oxidation process significantly improves the integrity of the circuit.
Career Highlights
Yu-Lam Ho is currently employed at LSI Logic Corporation, where he continues to push the boundaries of semiconductor technology. His work has had a lasting impact on the industry, particularly in the development of more efficient and reliable semiconductor devices.
Collaborations
Throughout his career, Yu-Lam Ho has collaborated with notable colleagues, including Sheldon Aronowitz and James O. Kimball. These partnerships have contributed to the advancement of various projects and innovations in the semiconductor field.
Conclusion
Yu-Lam Ho's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative methods and designs continue to influence the development of advanced electronic devices.